PART |
Description |
Maker |
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
Eudyna Devices Inc
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FLK057WG |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
HWL23NPB |
L-Band GaAS Power FET
|
Hexawave, Inc
|
HWL26NPB |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWL36YRA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWF1687RA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWL36YRA |
L-Band GaAs Power FET
|
Electronic Theatre Controls, Inc.
|
|